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Charging and the secondary electron-electron emission on a trench surface: broadening and shift of ion energy spectrum at plasma trench etchingстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 29 мая 2015 г.
- Авторы: Palov A.P., Mankelevich Y.A., Rakhimova T.V., Shamiryan D.
- Журнал: Journal of Physics D - Applied Physics
- Том: 43
- Номер: 7
- Год издания: 2010
- Издательство: IOP Publishing
- Местоположение издательства: [Bristol, UK], England
- Первая страница: 075203
- Последняя страница: 075210
- DOI: 10.1088/0022-3727/43/7/075203
- Аннотация: Trench surface charging at the plasma etching of dielectrics and semiconductors is a negative phenomenon because it leads to non-uniform etching of the trench bottom, undesirable etching of its wall, etch stop and breakdown of lower level device elements. To investigate the charging of a SiO(2) trench surface by argon radio frequency discharge plasma we applied the 3D Monte Carlo method for modelling the electron and ion trajectories inside a trench and used the 2D analytical method to calculate electric fields and potentials produced by the deposited charges. The secondary electron-electron emission was taken into account as a really important mechanism of electrical charge redistribution on the trench surface. The ion energy spectra were calculated for the trench aspect ratios (depth d/width w) of 1-20 and trench widths of 11, 22 and 45 nm for 180 eV ion flux. The transformation of an initial ion energy spectrum from a delta function at 180 eV into bell-shaped curves with peak shifts of 10-60 eV and broadening of 5-30 eV is obtained.
- Добавил в систему: Палов Александр Петрович