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Pyrosol Deposited Gallium Doped Zinc Oxide Thin Films For Crystalline-Silicon Solar Cellsстатья
- Авторы: Untila G.G., Kost T.N., Chebotareva A.B., Stepanov A.S., Zaks M.B., Sitnikov A.M., Solodukha O.I., Shevaleevskiy O.I., Kuznetsov L.I., Ivanova V.M.
- Сборник: Proceedings 28th European Photovoltaic Solar Energy Conference
- Год издания: 2013
- Место издания: WIP-Munich Munich
- Первая страница: 1048
- Последняя страница: 1052
- DOI: 10.4229/28thEUPVSEC2013-2BV.1.6
- Аннотация: The paper presents a study of gallium-doped zinc oxide (GZO) films ~225 and ~370 nm thick for crystalline silicon solar cell applications. The films were grown by ultrasonic spray pyrolysis at 400 °C in argon on (nn+)Si, (pp+)Si, and (p+nn+)Si structures and microscope slides. The Ga/Zn ratio in the film-forming solution was varied in the range of 0–15 at.%. The films were annealed for 10 min at 400 °C in an argon + methanol vapor mixture. We report the morphology of the films, absorption spectra, and resistivity, the time variation of their resistivity, and the photovoltage of GZO/(nn+)Si, GZO/(pp+)Si, and GZO/(p+nn+)Si structures.
- Добавил в систему: Унтила Геннадий Григорьевич