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Indium-Fluorine-Oxide Film as a Transparent Electrode for Crystalline Silicon Solar Cellsстатья
- Авторы: Untila G.G., Kost T.N., Chebotareva A.B., Zaks M.B., Sitnikov A.M., Solodukha O.I.
- Сборник: Proceedings 22nd European Photovoltaic Solar Energy Conference
- Год издания: 2007
- Место издания: WIP Munich Munich
- Первая страница: 600
- Последняя страница: 603
- Аннотация: Indium-Fluorine-Oxide (IFO) films were deposited by pyrosol method on specially made test sub-strates of textured crystalline silicon. Oxygen content carrier gas composition (Ar+O2) and F/In ratio in film-forming solution were varied. Photovoltages of IFO/Si heterojunctions both for p- and n-type silicon, photovoltage of IFO/(n+pp+)Si structures with diffused emitter as well as the resistance of IFO/(n+)Si contact have been studied. Ob-tained results show that both F/In ratio and oxygen content have a profound impact on the properties of non-stoichiometric SiO2-x layer which is formed at TCO/Si interface. In particular fluorine promotes while oxygen inhibits generation of oxygen vacancies. Consequently its dielectric and passivation properties as well as built-in positive charge and correspondingly barrier height at IFO/p-Si junction considerably change. Laminated Grid solar cells with IFO/(pp+)Si/ITO structure were prepared using optimized deposition conditions of IFO film developed in this work. Conversion efficiency 15.2% with open circuit voltage 591 mV were achieved – noticeably higher values compared with previous results (14.0% with 554 mV). It is concluded that there is the potential to further increase the conversion efficiency of silicon solar cells with transparent electrodes of IFO film.
- Добавил в систему: Унтила Геннадий Григорьевич