Charge carrier transport mechanisms in nanocrystalline indium oxideстатья

Информация о цитировании статьи получена из Scopus, Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 9 июня 2014 г.

Работа с статьей

[1] Charge carrier transport mechanisms in nanocrystalline indium oxide / E. A. Forsh, A. V. Marikutsa, M. N. Martyshov et al. // Thin Solid Films. — 2014. — Vol. 558. — P. 320–325. The charge transport properties of nanocrystalline indium oxide (In2O3) is studied. A number of nanostructured In2O3 samples with various nanocrystals size are prepared by sol–gel method and characterized using various techniques. The mean nanocrystals size varies from 7–8 nm to 18–20 nm depending on conditions of their preparation. Structural characterizations of the In2O3 samples are performed by means of transmission electron microscopy and X-ray diffraction. The analysis of dc and ac conductivity in a wide temperature range (T = 50–300 K) shows that at high temperatures charge carriers transport takes place over conduction band and at low temperatures a variable range hopping transport mechanism can be observed. We find out that the temperature of transition from one mechanism to another one depends on nanocrystals size: the transition temperature rises when nanocrystals are bigger in size. The average hopping distance between two sites and the activation energy are calculated basing on the analysis of dc conductivity at low temperature. Using random barrier model we show a uniform hopping mechanism taking place in our samples and conclude that nanocrystalline In2O3 can be regarded as a disordered system. [ DOI ]

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