Effect of the frequency of laser radiation on the IR multiphoton dissociation of diethylsilane

Zhitneva, G.P.; Zhitnev, Y.N.

Авторы: Zhitneva G.P., Zhitnev Y.N.
Журнал: High Energy Chemistry
Том: 38
Номер: 5
Год издания: 2004
Издательство: Pleiades Publishing, Ltd
Местоположение издательства: Road Town, United Kingdom
Первая страница: 350
Последняя страница: 352
DOI: 10.1023/B:HIEC.0000041349.55313.91
Аннотация: FN Thomson Reuters Web of Knowledge VR 1.0 PT J AU Zhitneva, GP Zhitnev, YN TI Effect of the frequency of laser radiation on the IR multiphoton dissociation of diethylsilane SO HIGH ENERGY CHEMISTRY VL 38 IS 5 BP 350 EP 352 DI 10.1023/B:HIEC.0000041349.55313.91 PD SEP-OCT 2004 PY 2004 TC 0 Z9 0 SN 0018-1439 UT WOS:000224351300012 ER PT J AU Zhitneva, GP Zhitnev, YN TI Laser-induced luminescence upon IR multiphoton excitation of diethylsilane SO HIGH ENERGY CHEMISTRY VL 38 IS 4 BP 269 EP 273 DI 10.1023/B:HIEC.0000035417.07123.57 PD JUL-AUG 2004 PY 2004 AB The general features of collisionless laser-induced luminescence upon the IR multiphoton dissociation of diethylsilane molecules were studied. The luminescence was detected in the wavelength region similar to400-700 nm, which is characteristic of the luminescence spectra of silylenes. Based on a comparative analysis of the luminescence behavior and product buildup kinetics in the IR multiphoton dissociation of diethylsilane, a conclusion was drawn that ethylsilyl radicals as the products of the primary reaction of C-Si bond dissociation play the main role in the formation of luminescent species. TC 0 Z9 0 SN 0018-1439 UT WOS:000223383200013 ER PT J AU Zhitneva, GP Zhitnev, YN TI Infrared multiphoton dissociation of diethylsilane molecules under collisionless conditions SO HIGH ENERGY CHEMISTRY VL 38 IS 3 BP 184 EP 190 DI 10.1023/B:HIEC.0000027657.20482.a5 PD MAY-JUN 2004 PY 2004 AB The IR multiphoton dissociation of diethylsilane under collisionless conditions was studied. It was found that the main unimolecular reactions are the dissociation of C-Si and C-C bonds. It was demonstrated that an increase in the number of substituent ethyl groups in going from diethylsilane to triethylsilane has no C effect on the mechanism of primary reactions of the molecules but leads to the elevation of energy thresholds for primary and secondary reactions. TC 1 Z9 1 SN 0018-1439 UT WOS:000221889700010 ER PT J AU Zhitneva, GP Zhitnev, YN Lunin, VV TI Laser-induced luminescence upon IR multiphoton excitation of triethylsilane SO HIGH ENERGY CHEMISTRY VL 37 IS 6 BP 417 EP 420 DI 10.1023/B:HIEC.0000003402.95236.96 PD NOV-DEC 2003 PY 2003 AB A comparative study of the effect of IR laser radiation frequency on the yield of secondary reactions and luminescence intensity as functions of the laser pulse energy upon IR multiphoton dissociation of triethylsilane was performed. It was found that the reaction and luminescence threshold energies symbatically increase on passing from a frequency of 985 to 944 cm(-1). Based on experiments with xenon admixture to triethylsilane, it was concluded that the diethylsilyl radical, the product of the primary reaction of C-Si bond dissociation, plays the major role in the reactions of formation of luminescent species. TC 2 Z9 2 SN 0018-1439 UT WOS:000187254000012 ER EF
Добавил в систему: Житнев Юрий Николаевич

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Effect of the frequency of laser radiation on the IR multiphoton dissociation of diethylsilaneстатья