Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantationстатья
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Дата последнего поиска статьи во внешних источниках: 20 февраля 2024 г.
Аннотация:The paper presents the results of Si surface modification created by implantation with Ag+ ions at energy of 30 keV, current density of 8 μA/cm2 for various doses from 6.0⋅1015 to 7.5⋅1016 ion/cm2 and annealed by powerful beam pulses (C+, H+) of nanosecond duration. Scanning electron microscopy and optical reflection measurements showed that after ion implantation an amorphous a-Si layer on the surface of c-Si substrates with Ag nanoparticles was formed. Followed pulse ion beam annealing of sample obtained at lowest dose of 6.0⋅1015 ion/ cm2 leads to melting and recrystallization of the Si surface layer with segregation of Ag nanoparticles. For samples implanted with doses higher than 2.5⋅1016 ion/cm2 after annealing an epitaxial cellular breakdown structures are fabricated on the Si surface decorated at the cell boundaries by Ag nanoparticles.