Defect Formation in Gd3AlxGa5–xO12 (x = 1–3) and Gd3Al2Ga3O12:Ce Crystals

Kasimova, V.M.; Kozlova, N.S.; Zabelina, E.V.; Buzanov, O.A.; Bykov, A.S.; Skryleva, E.A.; Spassky, D.A.

Авторы: Kasimova V.M., Kozlova N.S., Zabelina E.V., Buzanov O.A., Bykov A.S., Skryleva E.A., Spassky D.A.
Журнал: Inorganic Materials
Том: 59
Номер: 8
Год издания: 2023
Издательство: Maik Nauka/Interperiodica Publishing
Местоположение издательства: Russian Federation
Первая страница: 836
Последняя страница: 841
DOI: 10.1134/S0020168523080058
Аннотация: We present results of a detailed study of defect formation processes and their effect on the optical properties of gadolinium aluminum gallium garnet crystals with partial aluminum substitution for gallium in the cation sublattice—Gd3Al1Ga4O12 (Al : Ga = 1 : 4), Gd3Al2Ga3O12 (Al : Ga = 2 : 3), and Gd3Al3Ga2O12(Al : Ga = 3 : 2) and cerium-doped crystals: Gd3Al2Ga3O12:Сe3+ (GAGG:Ce). X-ray photoelectron spectroscopyand X-ray fluorescence analysis data demonstrate gallium deficiency relative to the stoichiometric composition in all of the crystals studied. The results obtained are used to analyze processes underlying the formation of structural growth point defects in gadolinium aluminum gallium garnet crystals. F-centers have been shown to be the predominant point defect species. We also have demonstrated the formation of Schottky defects and V-centers. The formation of additional F-centers in cerium-doped garnet crystals is happening. The refractive indices and attenuation coefficients of the crystals have been shown to depend on the Al : Ga ratio and doping with cerium.
Добавил в систему: Спасский Дмитрий Андреевич

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Defect Formation in Gd3AlxGa5–xO12 (x = 1–3) and Gd3Al2Ga3O12:Ce Crystalsстатья

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