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Characterization of zno:ga and zno:n films prepared by pldстатья
Информация о цитировании статьи получена из
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 15 февраля 2024 г.
- Авторы: Gorbatenko L.S., Novodvorsky O.A., Panchenko V.Ya, Khramova O.D., Cherebilo Ye A., Lotin A.A., Wenzel C., Trumpaicka N., Bartha J.W.
- Журнал: Laser Physics
- Том: 19
- Номер: 5
- Год издания: 2009
- Издательство: IOP Publishing
- Местоположение издательства: [Bristol, UK], England
- Первая страница: 1152
- Последняя страница: 1158
- DOI: 10.1134/S1054660X09050454
- Аннотация: The thin films of zinc oxide have been produced by the pulse laser deposition method at various levels of gallium and nitrogen doping. To obtain the n-type films we used gallium doping with concentration of gallium from zero up to 5 at %. The dependence of photoluminescence of the epitaxial ZnO:Ga films on the concentration of gallium doping has been studied. An optimum range of the n-type ZnO films doping with gallium has been determined to obtain highly effective films from the viewpoint of realizing p-n transitions. This range, on the one hand, defines the maximal PL amplitude and, on the other hand, specifies the minimal specific resistance that corresponds to an interval of 0.125-1.000 at % Ga. To produce the p-type ZnO:(Ga, N) films, the ZnO targets with the content of GaN from zero up to 2 at % were used. N2O was used as a buffer gas. A difference is observed in the positions of the peaks of the emission lines of the photoluminescence spectra for the ZnO films, doped with gallium (Ga) and co-doped with gallium and nitrogen (N)
- Добавил в систему: Панченко Владислав Яковлевич