Аннотация:The production of n- and p- type high-quality film structures presents a foregroundtask in tackling the problem of growing the light-emitting р-n junctions on the basis of zincoxide. The ZnO: N and ZnO: P thin films samples series have been produced by the pulselaser deposition method. The photoluminescence (PL) characteristics of the films haveresearched at the optical continuous excitation (325 nm, He-Cd laser). The PL spectra in area300 – 700 nm were registered by Ocean Optics HR4000 spectrometer in the temperaturesrange from 10 to 400К. The influence of the film deposition conditions on the PL spectrа hasbeen studied. The influence of the ZnO films N and P doping level on the intensity of thefilms PL spectra and the position of PL bandes in the UV region have investigated. Theabsorption spectra of ZnO: N and ZnO: P films in short-wave area (250-400 nm) have beenmeasured. The influence of the N and P doping level on the ZnO films band-gap width hasbeen investigated.