Structure-related current transport and photoluminescence in SiOxNy and SiNx based superlattices with Si nanocrystalsстатья

Информация о цитировании статьи получена из Scopus, Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 27 мая 2020 г.

Работа с статьей

[1] Structure-related current transport and photoluminescence in sioxny and sinx based superlattices with si nanocrystals / D. M. Zhigunov, M. N. Martyshov, P. A. Forsh et al. // Physica Status Solidi (A) Applications and Materials Science. — 2017. — Vol. 214, no. 10. — P. 1700040. A comparative study of structural properties, photoluminescence and electrical conductivity of SiOxNy/SiO2, SiOxNy/Si3N4 and SiNx/Si3N4 superlattices is presented. The samples were prepared by plasma enhanced chemical vapor deposition and annealed at 1150 oC in order to produce arrays of silicon nanocrystals, with their formation being confirmed by X-ray diffraction analysis and photoluminescence spectroscopy. Reference samples without silicon nanocrystals were also fabricated by annealing of as-prepared films at a lower temperature (700 oC). All high temperature -annealed samples are characterized by similar photoluminescence spectra with the maxima in the range from 1.3 to 1.6 eV, which were attributed to Si nanocrystals. The peak position, as well as photoluminescence lifetime in the microsecond range, point to the quantum confined origin of the emission. Current-voltage measurements revealed an increase in conductivity by several orders of magnitude for the samples with Si nanocrystals in SiNx/Si3N4 superlattices as compared to both SiOxNy/Si3N4 and SiOxNy/SiO2 films, as well as to low temperature annealed counterparts. The dependence of the conduction mechanism in superlattices on their structural properties is discussed. [ DOI ]

Публикация в формате сохранить в файл сохранить в файл сохранить в файл сохранить в файл сохранить в файл сохранить в файл скрыть