Effect of thermal annealing on structure and conductivity of hafnium oxide thin films

Кучумов, И.Д.; Мартышов, М.Н.; Форш, П.А.

Авторы: Кучумов И.Д., Мартышов М.Н., Форш П.А.
Сборник: 28th International Scientific Conference of Young Scientists and Specialists (AYSS-2024)
Тезисы
Год издания: 2024
Место издания: JINR, Dubna, Russia
Номер статьи: 1724
Аннотация: Hafnium oxide HfOx is one of the promising materials in modern electrical physics. Due to its high dielectric constant, chemical and physical stability, its thin films are often used in the manufacture of capacitors, transistors and other microelectronic devices, such as gas detectors. In addition, hafnium oxide has a resistive switching effect. This effect is the basis for creating unique elements of an electric circuit- memristors, capable of having several resistive states and changing them depending on the electric current. Due to the mechanism of their operation, memristors are used to create fast, compact, non-volatile memory cells. But increasing the service life of memristors, as well as their stability, remains an open problem. Changing the structural properties due to annealing at high temperatures can significantly improve the conductivity of the films, as well as increase the stability of their operation. In our research, we studied the effect of annealing in air atmosphere at temperatures of 400, 500 and 600 oC onthe structural and electrical properties of films obtained by electron beam deposition. This information can be used to create electrical devices based on hafnium oxide and to improve the key properties of memristors based on them.
Добавил в систему: Кучумов Иван Дмитриевич

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