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Effect of external uniaxial stress on the electronic properties and symmetry of p-GaAs/AlXGa1-XAs quantum wellsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Kolokolov K.I., Savin A.M., Beneslavski S.D., Minina N.Y., Hansen O.P.
- Журнал: High Pressure Research
- Том: 18
- Номер: 1-6
- Год издания: 2000
- Издательство: Taylor & Francis
- Местоположение издательства: United Kingdom
- Первая страница: 69
- Последняя страница: 74
- DOI: 10.1080/08957950008200950
- Аннотация: The results of experimental and theoretical investigations of the energy spectrum and electronic properties of symmetric p-[001] Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostruc-tures under uniaxial [110] compression are presented. The stress-induced piezoelectric field breaks the confining potential symmetry in the quantum well and lifts the degeneracy of the hole subbands. A redistribution of holes in the spin subbands of the ground state takes place, which is revealed in the different shifts of the Shubnikov-de Haas oscillation maxima corresponding to the different spin subbands. The [110] uniaxial compression significantly modifies the band structure, which leads to a strong aniso-tropy of the Fermi surface. The electrical resistance becomes strongly anisotropic under applied compression, decreasing in the direction parallel to the compression and increasing in the perpendicular direction.
- Добавил в систему: Минина Наталья Яковлевна