Crystal growth of CW diode-pumped (Er3+,Yb3+):GdAl3(BO3)4 laser materialстатья
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Дата последнего поиска статьи во внешних источниках: 31 октября 2014 г.
Аннотация:Phase relationships in the Er:YbxGd1−xAl3(BO3)4–K2Mo3O10–B2O3–(Gd,Er,Yb)2O3 (x=0–0.2, Er-1 at%) system were studied in the temperature range from 1150 to 900 °С. Multicomponent melts of 55 mol%K2Mo3O10–45 mol% B2O3 (I) and 55 mol% K2Mo3O10–40 mol% B2O3–5 mol% (Gd,Er,Yb)2O3 (II) were suggested as reasonable fluxes for high-temperature solution growth of (Yb3+,Er3+):GdAl3(BO3)4 single crystals. Yb0.15Gd0.85Al3(BO3)4 solubility in the complex flux of II composition has been found as varying from 17 to 9.5 mol% with decreasing temperature in the interval of 1000–800 °C. As a result, (Er,Yb):GdAB single crystals with high optical quality and sizes up to 20×10×10 mm were grown on dipped “point” seeds. Absorption and stimulated emission spectra, emission lifetimes, and efficiencies of energy transfer from Yb3+ to Er3+ ions were determined. Highly efficient continuous-wave diode-pumped laser operation of (Er,Yb):GdAl3(BO3)4 crystal was realized.