Dynamics of Paramagnetic Centres in Hafnium Oxide during Electron-Beam Deposition

Авторы: Konstantinova Е.А., Koroleva А.V., Pavlikov А.V., Kytina Е.V., Ilin А.S., М N.Martyshov
Журнал: Moscow University Physics Bulletin
Том: 80
Номер: 3
Год издания: 2025
Издательство: Allerton Press
Местоположение издательства: New York, N.Y., United States
DOI: 10.55959/MSU0579-9392.80
Аннотация: Hafnium oxide, possessing a high permittivity, is of interest for use as memristors in electronics.In this paper, a comparative analysis of the type and main characteristics of paramagnetic centreshas, for the first time, been performed on a series of samples that underwent successive synthesisstages: from the initial target sample to the film on a substrate It has been established that theprimary type of defects in the studied materials are oxygen vacancies with an unpaired electron(F+ centres). It has been found that during the deposition of the target (crystalline hafnium oxide),the concentration of F+ centres decreases, probably as a result of recharging. It has been establishedthat in the deposited hafnium oxide film, the concentration of F+ defects increases by an order of magnitude. The observed experimental fact is explained by the disordered (amorphous) structureof the film.
Добавил в систему: Константинова Елизавета Александровна

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