Electron backscattering coefficient, material contrast and response function of BSE- detectors in scanning electron microscopy

Rau, E.I.; Zaitsev, S.V.

Информация о цитировании статьи получена из Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 1 октября 2025 г.

Авторы: Rau E.I., Zaitsev S.V.
Журнал: Ultramicroscopy
Том: 276
Год издания: 2025
Издательство: Elsevier BV
Местоположение издательства: Netherlands
Первая страница: 1
Последняя страница: 5
Номер статьи: 114196
DOI: 10.1016/j.ultramic.2025.114196
Аннотация: A B S T R A C TAn empirical expression for the electron backscattering coefficient η, mean backscattered energy coefficient ε andresponse function F of backscattered electrons (BSE) detectors in scanning electron microscope (SEM) areestablished for bulk specimens in dependence of atomic number Z and primary electrons energy EB.The obtained expressions give more precisely data of η than all previous publications in the wide energy rangeEB 1–30 keV. They were used to describe the dependence of the BSE signal IS from atomic number of the targetmaterial Z and SEM accelerating voltage EB. The image contrast as a function of Z -differences and EB isconsidered. Particular attention is paid to the influence of the response function F on the formation of the ISsignal. All consideration were carried out with commercial semiconductor or scintillation BSE – detectorsinstalled in SEM in standard position below from objective lens and right above the sample. The characteristicswere compared with similar of the multichannel plate (MCP) detector.
Добавил в систему: Рау Эдуард Иванович

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Electron backscattering coefficient, material contrast and response function of BSE- detectors in scanning electron microscopyстатья

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