Место издания:World Scientific Pub. Co. Pte. Ltd Singapore, Singapore
Первая страница:609
Последняя страница:612
Аннотация:New results on the influence of uniaxial stress up to P = 4 kbar along [110] and [1-10] directions on the electroluminescence spectra of laser diode nanostructures p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs are presented. With increasing stress, the emission spectra demonstrate a blue shift of up to 20-25 meV at P = 3 - 4 kbar, while the electroluminescence intensity and light efficiency increas under compression. The results are discussed in terms of changes in the band structure under uniaxial compression.