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Energy shifts of heavy and light holes and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode heterostructure under uniaxial compressionтезисы доклада
- Авторы: Bogdanov E.V., Marintsev P.S., Minina N.Ya, Mironov D.E.
- Сборник: Abstracts. 5rd Int. Conf. on Materials Science and Condensed Matter Physics. Chisinau, September 13-17m 2010
- Тезисы
- Год издания: 2010
- Место издания: Chisinau, Moldova
- Первая страница: 226
- Аннотация: Numerical calculations of the valence band and conduction band size quantized levels in a strained p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs (y = 0.16) double heterostructure were performed for different values of the external uniaxial compression along [110] direction. They indicate that the two upper levels in the valence band – light hole LH1 and heavy hole HH1 – intersect at pressure about 4 kbar and a strong LH1-HH1 state mixing develops around the crossover point. The results of calculations explain the nonlinear character of the photon energy shift and electroluminescence intensity increase that were experimentally observed in these structures under uniaxial compression up to 5 kbar.
- Добавил в систему: Минина Наталья Яковлевна