Аннотация:Growing demands for purity of the refractory metals, including titanium, due to new critical applications of these metals - for example, nuclear research or submicroelectronics, when the content of impurities in the metal is at the limit of the analytical methods of determining and require special methods of analysis. Increasing purity titanium to the content of impurities of the tens or units ppb, opens up new prospects for the use of thin film metallization in submicroelectronics where purity titanium largely determines the electrical parameters of thin layers, and the nuclear physics research, where from the content of radioactive impurities will depend feasibility and subsequent performance of low-background detectors.