Growth of Porous Anodic Alumina on Low-Index Surfaces of Al Single CrystalsстатьяИсследовательская статьяЭлектронная публикация
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 23 января 2018 г.
Аннотация:The pseudo-epitaxial growth of amorphous anodic alumina with ordered porous structure within single crystal grains of aluminium substrates is amazing feature of self-organization process, which occurs during anodization. Here, we used single crystal Al(100), Al(110), and Al(111) substrates to inspect the effect of aluminum crystallography on anodization rates and the morphology of resulting alumina films grown under different anodization conditions. The difference in the kinetics of porous film growth on various substrates is described in terms of activation barrier of aluminum atom release from the metal surface to oxide layer. Scanning electron microscopy and small-angle X-ray scattering are applied for quantitative characterization of different kinds of ordering in anodic alumina films. Highest number of straight channels was found in porous anodic alumina grown on Al(100) substrates, whereas Al(111) was proved to induce best orientational order in anodic alumina with formation of the single-domain-like structures. Based on the obtained results, possible pathways for crystallographic control of anodic alumina porous structure for different practical applications are discussed.