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Full CVD Reel-To-Reel Process to Obtain Perfectly Oriented Silicon Films on Metal Tapes with Oxide Buffer Layers,статья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 2 апреля 2015 г.
- Авторы: Moyzykh M., Samoilenkov S., Amelichev V., Vasiliev A., Pozdnyakov M., Mankevich A., Tschepikov V., Kaul A.
- Журнал: Chemical Vapor Deposition
- Том: 20
- Номер: 10-11-12
- Год издания: 2014
- Издательство: John Wiley & Sons Ltd.
- Местоположение издательства: United Kingdom
- Первая страница: 356
- Последняя страница: 363
- DOI: 10.1002/cvde.201407107
- Аннотация: Keywords:Epitaxy;Semiconducting silicon;Texture;X-ray diffraction (XRD) Silicon films with a sharp biaxial texture on low-cost, flexible metal tapes are prominent materials for cost-effective photovoltaics. The cost of such materials can be further reduced by the application of easily scalable chemical deposition methods. In the present article, we report on the application of CVD to obtain epitaxial silicon films on Ni alloy tapes with metal-organic (MO)CVD-produced buffer layers. Two types of buffer layer architecture are presented, which enable textured silicon growth on textured Ni(Cr,W) alloy and on non-textured Hastelloy tape. The Si film appears highly textured and demonstrates chemical purity, indicating the possibility of application of proposed Si/buffer/metal heterostructures formed by CVD for the photovoltaic industry.
- Добавил в систему: Кауль Андрей Рафаилович