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Inversion of the conductivity type anf Fermi level pinning in Pb1-x-ySnxCryTe alloysтезисы доклада
- Авторы: Skipetrov E.P., Pichugin N.A., Kovalev B.B., Knotko A.V., Slyn’ko E.I., Slyn’ko V.E.
- Сборник: 5-th International Conference on Materials Science and Condensed Matter Physics (MSCMP). Book of Abstracts
- Тезисы
- Год издания: 2010
- Место издания: Chisinau, Moldova
- Первая страница: 164
- Аннотация: In order to study an effect of chromium doping on the free charge carrier concentration and electronic structure of Pb1-x-ySnxCryTe alloys in the present paper we have investigated galvanomagnetic properties (T=4.2-300 K, B<8 T) of the alloys with nominal tin and chromium contents x=0.08, 0.15 and y=0.01 respectively. In all investigated samples the temperature dependencies of resistivity ρ(T) and the Hall coefficient RH(T) demonstrated a metal-like behavior. Samples with small tin and impurity concentrations are p-type. Under the increase of the tin and chromium content the increase of ρ, RH, the Hall mobility μH and p-n-conversion occur. In the n-type phase galvanomagnetic parameters tend to saturation, corresponded to the pinning of the Fermi level by the chromium resonant level, the Hall mobility μH achieves values as high as 105 cm2/Vs and Shubnikov-de Haas oscillations in the heavily doped alloys appears. These experimental results were used to obtain dependencies of the free charge carrier concentration on the tin and chromium content and to construct the diagram of electronic structure rearrangement in the alloys.
- Добавил в систему: Скипетров Евгений Павлович