Аннотация:In order to investigate the electronic structure rearrangement under pressure in the present work the galvanomagnetic properties (T=4.2-300 K, B<8 T) of Pb1-x-ySnxVyTe (x≈0.18, y≈0.01) alloy under hydrostatic compression up to 15 kbar are studied. Obtained experimental results are discussed in the frame of the model assuming the linear shift of vanadium deep level towards valence band top under pressure and opposite movement of the level with the increase of temperature. In this model the n-p-inversion of the RH sign on the temperature dependencies of the Hall coefficient may be attributed to the intersection of vanadium level with the middle of the gap under variation of temperature, while the insulator-metal transition – to the intersection of the level with the valence band top and redistribution of electrons between the band and the level under pressure. The diagram of the electronic structure rearrangement under pressure in Pb1-x-ySnxVyTe are proposed.