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INFLUENCE OF GAMMA-RAY IRRADIATION ON THE DEGRADATION OF SUPERLUMINESCENT DIODES BASED ON AlGaAs/GaAs HETEROEPITAXIAL STRUCTURES DURING THE BURN-IN TESTтезисы доклада Исследовательская статья Тезисы
- Авторы: Lagov P.B., Tapero K.I., Perevozchikov M.V., Drenin A.S.
- Сборник: 4th International Symposium on Reliability of Optoelectronics for Systems
- Серия: ISROS 2014
- Тезисы
- Год издания: 2014
- Место издания: Toulouse, France
- Первая страница: 1
- Последняя страница: 6
- Аннотация: The influence of irradiation by gamma rays 60Co on the degradation of superluminescent diodes based on AlGaAs/GaAs heteroepitaxial structures during burn-in test is addressed. The results showed that preliminary gamma irradiation of potentially unreliable structures containing latent defects leads to the increase in optical power degradation rate during the subsequent burn-in test, while for reliable (defect-free) structures such an irradiation leads to the decrease in optical power degradation rate during the subsequent burn-in test. A possible cause of enhanced degradation of potentially unreliable structures is the presence of local defects, which can be rearranged into clusters of the size comparable with the thickness of active region during a long-term operation or gamma-ray irradiation. The decrease in the degradation rate during burn-in test for reliable structures irradiated by gamma rays can be attributed to the relaxation of mechanical stresses and increase of homogeneity of layers inheteroepitaxial structures. The obtained results suggest that preliminary gamma irradiation can be used for rejection of potentially unreliable superluminescent diodes, and the paper describes the appropriate method to achieve such rejection.
- Добавил в систему: Лагов Петр Борисович
Прикрепленные файлы
| № | Имя | Описание | Имя файла | Размер | Добавлен |
|---|---|---|---|---|---|
| 1. | Полный текст | Lagov_Tapero_Perevozchikov_Drenin_ISROS2014_paper.pdf | 574,3 КБ | 17 февраля 2018 [lagov2000] |