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Статьи в журналах
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- 2018 The quantitative analysis of silicon carbide surface smoothing by Ar and Xe cluster ions
- Ieshkin A.E., Kireev D.S., Ermakov Yu A., Trifonov A.S., Presnov D.E., Garshev A.V., Anufriev Yu V., Prokhorova I.G., Krupenin V.A., Chernysh V.S.
- в журнале Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, издательство Elsevier BV (Netherlands), том 421, с. 27-31 DOI