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Статьи в журналах
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- 2008 Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H
- Nguyen Phuong, Bourdelle K.K., Aulnette C., Lallement F., Daix N., Daval N., Cayrefourcq I., Letertre F., Mazuré C., Bogumilowicz Y., Tauzin A., Deguet C., Cherkashin N., Claverie A.
- в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 104, № 11 DOI