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Статьи в журналах
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- 2007 The effect of order and dose of H and He sequential implantation on defect formation and evolution in silicon
- Nguyen Phuong, Bourdelle K.K., Maurice T., Sousbie N., Boussagol A., Hebras X., Portigliatti L., Letertre F., Tauzin A., Rochat N.
- в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 101, № 3 DOI