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Статьи в журналах
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- 2007 The effect of order and dose of H and He sequential implantation on defect formation and evolution in silicon
- Nguyen Phuong, Bourdelle K.K., Maurice T., Sousbie N., Boussagol A., Hebras X., Portigliatti L., Letertre F., Tauzin A., Rochat N.
- в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 101, № 3 DOI
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- 2005 Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range
- Nguyen Phuong, Cayrefourcq I., Bourdelle K.K., Boussagol A., Guiot E., Ben Mohamed N., Sousbie N., Akatsu T.
- в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 97, № 8 DOI
Статьи в сборниках
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- 2004 Smart Cut/spl trade/ transfer of 300 mm [110] and (100) Si layers for hybrid orientation technology
- Bourdelle K.K., Akatsu T., Sousbie N., Letertre F., Delprat D., Neyret E., Ben Mohamed N., Suciu G., Lagahe-Blanchard C., Beaumont A., Charvet A.M., Papon A.M., Kernevez N., Maleville C., Mazure C.
- в сборнике 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573), место издания IEEE DOI