ИСТИНА

In the field of modern microelectronics interaction between argon plasma and porous SiOCH low-K films is intently studied. Thus, calculations of the O-Ar+ interaction potential and corresponding elastic scattering cross sections, are important for Monte Carlo and molecular dynamics simulations of sputtering processes. We applied the MRCI method with the aug-cc-pV5Z basis set to obtain the exited ²Π state of OAr+ ion. The interaction potential between oxygen atoms (³P state) and argon ions (²P state) calculated on ab initio level in the vast range of internuclear distances (0.8-100 a.u.). The elastic scattering process has been studied for relative kinetic energies of 10-500 eV.