ИСТИНА

Ar/SF6 ICP etching of p-Ge MJ SC substrate was investigated at different ICP power levels and SF6 flow rate at constant pressure of 7 Pa. The etch rate of Ge increases from 11.9 to 19.4 µm/min and surface roughness decreases while ICP power level increases from 400 to 650W at SF6 flow rate of 300 sccm. Also, etch rate of Ge increases by a power law from 8.0 to 16.7 µm/min as the SF6 flow rate increase from 50 to 300 sccm at ICP power of 570 W. Identifications of earlier calculated Ritz lines suggested via OES and XPS studies using NIST databases.