![]() |
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ИНХС РАН |
||
The electron beam charge kinetics of Al2O3 and SiO2 has been studied by scanning electron microscope. It has been found a large difference in kinetics for the initial dielectric samples in comparison with the samples pre-irradiated by electrons and ions. This difference can be explained by radiation-induced defect formation. It has been shown a strong influence of the surface structure modification and changes in the electrical characteristics of the surface, in particular the charge spreading.