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Ion-stimulated plasma treatment plays an important part in the pattering of nanoporous low-k SiOCH films developed for advanced interconnects of ULSI devices. In this work, the molecular dynamics method was applied to study physical sputtering of Si- and SiO2-based nanoporous materials under low-energy Ar irradiation. The simulation results demonstrate the differences in sputtering mechanisms for nanoporous and solid materials of the same composition.