SOVIET PHYSICS SEMICONDUCTORS-USSR Volume: 3 Issue: 2 Pages: 212-& Published: 1969журнал

Статьи, опубликованные в журнале

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• • Investigation of the spectral dependence of the photoionization cross sections of phosphorus atoms and A-type centers in silicon by the EPR method
  • Vavilov Ya G Klyava V.S., Koshelev and O.G
  • в журнале SOVIET PHYSICS SEMICONDUCTORS-USSR Volume: 3 Issue: 2 Pages: 212-& Published: 1969