Anodizing with voltage versus optical path length modulation: a new tool for the preparation of photonic structures

Kushnir, S.E.; Pchelyakova, T.Y.; Napolskii, K.S.

Статья опубликована в высокорейтинговом журнале

Информация о цитировании статьи получена из Web of Science, Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 23 декабря 2018 г.

Авторы: Kushnir Sergey E., Pchelyakova Tatyana Yu, Napolskii Kirill S.
Журнал: Journal of Materials Chemistry С
Том: 6
Номер: 45
Год издания: 2018
Издательство: Royal Society of Chemistry
Местоположение издательства: United Kingdom
Первая страница: 12192
Последняя страница: 12199
DOI: 10.1039/C8TC04246B
Аннотация: One-dimensional photonic crystals – multilayered structures with periodic modulation of a refractive index – are of great practical importance in modern materials science and nanotechnology owing to a variety of their applications in optoelectronics, solar photovoltaics, and sensorics. Anodizing of valve metals under oscillating conditions, which allows one to produce porous oxide films with modulated porosity across the film thickness, is one of the low-cost, scalable, and reproducible methods of the preparation of 1D photonic crystals. However, precise control of the refractive index and the optical path length of the single layers in anodic oxides is still a challenge, mainly due to the chemical widening of pores in the upper part of an oxide film during the anodizing and, thus destroying the structure periodicity produced electrochemically. Here the novel anodizing regime with feedback, which takes into account the rate of chemical etching as a parameter, is suggested for the precise control of morphology of porous films of anodic oxides of valve metals. The suggested approach allows one to apply anodizing voltage as a function of the optical path length of an oxide layer. The potential of the suggested approach is demonstrated on the preparation of one-dimensional anodic alumina photonic crystals with an unprecedentedly high quality factor of photonic band gaps. The possibility to tune the position of a photonic band gap within the range of 250 – 1400 nm with an inaccuracy of <1% is shown.
Добавил в систему: Кушнир Сергей Евгеньевич

	ИСТИНА	Войти в систему Регистрация
	ИСТИНА ИНХС РАН
	Главная Поиск Статистика О проекте Помощь

ИСТИНА

ИСТИНА ИНХС РАН

Anodizing with voltage versus optical path length modulation: a new tool for the preparation of photonic structuresстатья Исследовательская статья

Прикрепленные файлы