|
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ИНХС РАН |
||
HIGH-RATE HIGH-DENSITY ICP ETCHING OF GERMANIUMстатья Исследовательская статья
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 14 августа 2019 г.
- Авторы: Lagov P.B., Maslovsky V.M., Pavlov Yu S., Rogovsky E.S., Drenin A.S., Bondariev V.A.
- Журнал: High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
- Том: 23
- Номер: 1
- Год издания: 2019
- Издательство: Begell House Inc.
- Местоположение издательства: Danbury, United States
- Первая страница: 57
- Последняя страница: 70
- DOI: 10.1615/HighTempMatProc.2019029959
- Аннотация: Inductively coupled Ar/SF6 plasma (ICP) etching p-type germanium (Ge) substrate used for a multifunction solar cell (MJ SC) was investigated at different ICP power levels and SF6 flow rates at a constant working pressure of 7 Pa. The etching rate of Ge increases linearly from 11.9 to 19.4 μm/min and surface roughness decreases as the ICP power level increases from 400 to 650 W at SF6 flow rate of 300 sccm. Also, the etching rate of Ge increases by a power law from 8.0 to 16.7 μm/min as the SF6 flow rate increases from 50 to 300 sccm at ICP power of 570 W. OES and XPS studies were carried out using NIST databases. Identifications for some calculated Ritz lines were suggested.
- Добавил в систему: Павлов Юрий Сергеевич