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Статьи в журналах
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- 2016 Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages
- Luong G.V., Strangio S., Tiedemannn A., Lenk S., Trellenkamp S., Bourdelle K.K., Zhao Q.T., Mantl S.
- в журнале Solid-State Electronics, издательство Pergamon Press Ltd. (United Kingdom), том 115, с. 152-159 DOI