Solid-State Electronicsжурнал

Статьи, опубликованные в журнале

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  • 2022 Parallel nanowire sensors with a high-k gate oxide for the sensitive operation in liquids
  • Popov V.P., Tikhonenko F.V., Antonov V.A., Zarubanov A.A., Gluhov A.V., Tatarintsev A.A., Miakonkikh A.V., Rudenko K.V.
  • в журнале Solid-State Electronics, издательство Pergamon Press Ltd. (United Kingdom), том 194 DOI
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  • 2020 Hafnia and alumina stacks as UTBOXs in silicon-on insulator
  • Popov V.P., Antonov V.A., Gutakovskiy A.K., Tyschenko I.E., Vdovin V.I., Miakonkikh A.V., Rudenko K.V.
  • в журнале Solid-State Electronics, издательство Pergamon Press Ltd. (United Kingdom), том 168, с. 107734 DOI
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  • 2017 Study of built-in electric field in active region of GaN/InGaN/AlGaNLEDs by electroreflectance spectroscopy
  • Avakyants L.P., Aslanyan A.E., Bokov P.Yu, Chervyakov A.V., Polozhentsev K.Yu
  • в журнале Solid-State Electronics, издательство Pergamon Press Ltd. (United Kingdom), том 130, № 4, с. 45-48 DOI
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  • 2012 Quantum simulation of an ultrathin body field-effect transistor with channel imperfections
  • Vyurkov V., Semenikhin I., Filippov S., Orlikovsky A.
  • в журнале Solid-State Electronics, издательство Pergamon Press Ltd. (United Kingdom), том 70, с. 106-113
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  • 2010 Experimental Measurement of Work Functionin Doped Silicon Surfaces
  • Novikov A.V.
  • в журнале Solid-State Electronics, издательство Pergamon Press Ltd. (United Kingdom), том 54, с. 8-13
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  • 2004 Fabrication of ZnO-based metal-insulator-semiconductor diodes by ion implantation
  • Alivov Ya I., Look D.C., Ataev B.M., Chukichev M.V., Mamedov V.V., Zinenko V.I., Agafonov Yu A.
  • в журнале Solid-State Electronics, издательство Pergamon Press Ltd. (United Kingdom), том 48, № 12, с. 2343-2346
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  • 2003 ZN DOPING INTO INP INDUCED BY ND: YAG CONTINUOUS WAVE LASER
  • Hongtao T., Zhihua C., Chao C., Haiguang Z., Kashkarov P.K., Markevich M.I.
  • в журнале Solid-State Electronics, издательство Pergamon Press Ltd. (United Kingdom), том 47, № 5, с. 923-925
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  • 2002 Non-radiative recombination at reconstructed Si surfaces
  • Dittrich T., Bitzer T., Rada T., Timoshenko V.Y., Rappich J.
  • в журнале Solid-State Electronics, издательство Pergamon Press Ltd. (United Kingdom), том 46, № 11, с. 1863-1872 DOI
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  • 2001 Performance of nanocrystalline graphite field emitters
  • Busta H.H., Espinosa R.J., Rakhimov A.T., Suetin N.V., Timofeyev M.A., Bressler P., Schramme M., Fields J.R., Kordesch M.E., Silzars A.
  • в журнале Solid-State Electronics, издательство Pergamon Press Ltd. (United Kingdom), том 45, № 6, с. 1039-1047
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  • 1996 A nondestructive method for measuring the photoelectric parameters of wafers with p-n junctions
  • Koshelev O.G., Morozova V.A.
  • в журнале Solid-State Electronics, издательство Pergamon Press Ltd. (United Kingdom), том 39, № 9, с. 1379-1383 DOI
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  • 1996 Phonon Raman scattering in quantum wires
  • Rubio J., VanderMeulen H.P., Mestres N., Calleja J.M., Wang K.H., Ils P., Forchel A., Gippius N.A., Tikhodeev S.G.
  • в журнале Solid-State Electronics, издательство Pergamon Press Ltd. (United Kingdom), том 40, № 1-8, с. 707-710 DOI