Synergistic effect of VUV photons and F atoms on damage and etching of porous organosilicate filmстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 10 августа 2018 г.
Аннотация:Synergistic effect between VUV photons and F atoms in both damage and etching of porous organosilicate (OSG) low-k films was studied. It was shown that both the OSG damage and etching rates by F atoms notably drop with decreasing temperature due to the existence of activation energy while the rate of the VUV-induced damage practically does not change. The joint exposure can significantly exceed the sum of the separate effects of VUV photons and F atoms. The reason is that absorbed photons energy allows F atoms to overcome the activation barrier especially under lowered temperature. A possible mechanism of F atom surface reactions assisted by VUV photons is analyzed and discussed.