Damage and etching of ultra low-k materials in fluorocarbon plasma at lowered temperaturesстатьяИсследовательская статьяЭлектронная публикация
Статья опубликована в высокорейтинговом журнале
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 25 февраля 2018 г.
Аннотация:SiOCH ULK films with k-value from 2.5 to 2.1 and porosity from 24 to 40 % were
etched in CHF3, CHF3+Ar, CF4 and CF4+Ar plasmas at +15…-120 °C with and without bias
being applied. It was shown that the presence of Ar in gas mixture can significantly increase
the damage of unetched ultra low-k (ULK) material (at sidewalls) due to the removal of –CH3
groups from the film by VUV photons. It was also shown that etching and damage of the
sidewalls by F atoms can be partially prevented by lowering the temperature of the sample.